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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFG480W
NPN wideband transistor
Product specification 1998 Oct 21
Supersedes data of 1998 Jul 09
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
FEATURES PINNING
High power gain PIN DESCRIPTION
High efficiency 1 emitter
Low noise figure 2 base
High transition frequency 3 emitter
Emitter is thermal lead 4 collector
Low feedback capacitance
Linear and non-linear operation.
handbook, halfpage 3 4
APPLICATIONS
RF front end with high linearity system demands
(CDMA)
2 1
Common emitter class AB driver.
Top view MSB842
DESCRIPTION Marking code: P6.
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a 4-pin dual-emitter Fig.1 Simplified outline SOT343R.
SOT343R plastic package.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCEO collector-emitter voltage open base 4.5 V
IC collector current (DC) 80 250 mA
Ptot total power dissipation Ts 60 C 360 mW
fT transition frequency IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 21 GHz
Gmax maximum gain IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 16 dB
F noise figure IC = 8 mA; VCE = 2 V; f = 2 GHz; S = opt 1.8 dB
Gp power gain Pulsed; class-AB; < 1 : 2; tp = 5 ms; 13.5 dB
VCE = 3.6 V; f = 2 GHz; PL = 100 mW
C collector efficiency Pulsed; class-AB; < 1 : 2; tp = 5 ms; 45 %
VCE = 3.6 V; f = 2 GHz; PL = 100 mW
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1998 Oct 21 2
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 14.5 V
VCEO collector-emitter voltage open base 4.5 V
VEBO emitter-base voltage open collector 1 V
IC collector current (DC) 250 mA
Ptot total power dissipation Ts 60 C; note 1; see Fig.2 360 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 250 K/W
MGR623
500
handbook, halfpage
Ptot
(mW)
400
300
200
100
0
0 40 80 120 160
Ts (