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2SC4672
SOT-89 Transistor(NPN)
1. BASE
SOT-89
2. COLLECTOR
1 4.6
4.4
B
1.6
1.8
1.4
2 1.4
3. EMITTER
3 2.6 4.25
2.4 3.75
Features 0.8
MIN
0.53
Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
1.5
Excellent DC current gain characteristics. 3.0
Complements the 2SA1797.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 2 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 6 V
Collector cut-off current ICBO VCB=60V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
DC current gain hFE VCE=2V,IC=0.5A 82 270
Collector-emitter saturation voltage VCE(sat) IC=1A,IB=50mA 0.35 V
Transition frequency fT VCE=2V,IC=500mA,f=100MHz 210 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 25 pF
CLASSIFICATION OF hFE
Rank P Q
Range 82-180 120-270
Marking DKP DKQ
2SC4672
SOT-89 Transistor(NPN)
Typical Characteristics