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SS8 550


TRANSISTOR(PNP)
SOT-323
FEATURES
Complimentary to SS8050

MARKING: Y2 1. Base
2. Emitter
3. Collector

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1.5 A
PC Collector Power Dissipation 0.2 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
hFE(1) VCE=-1V, IC=-100mA 120 400
DC current gain
hFE(2) VCE=-1V, IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V
Base-emitter on voltage VBE(on) IC=-1V,VCE=-10mA -1 V
Base-emitter positive favor voltage VBEF IB=-1A -1.55 V
VCE=-10V,IC=-50mA,
Transition frequency fT 100 MHz
f=30MHz
output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF


CLASSIFICATION OF hFE(1)
Rank L H J

Range 120-200 200-350 300-400

1




JinYu www.htsemi.com
semiconductor

Date:2011/05
SS8 550



-0.5 1000
VCE = -1V
IB=-4.0mA
-0.4 IB=-3.5mA
IC[A], COLLECTOR CURRENT




hFE, DC CURRENT GAIN
IB=-3.0mA 100
-0.3 IB=-2.5mA

IB=-2.0mA
-0.2 IB=-1.5mA
10

IB=-1.0mA
-0.1

IB=-0.5mA

1
-0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -1 -10 -100 -1000


VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE




-10000 -100
IC=10IB VCE = -1V
IC[mA], COLLECTOR CURRENT




-1000 -10

VBE(sat)




-100 -1

VCE(sat)




-10 -0.1
-0.1 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2


IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT




100 1000
f=1MHz VCE=-10V
IE=0
Cob[pF], CAPACITANCE




10 100




1 10
-1 -10 -100 -1000 -1 -10 -100 -1000


VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT




2




JinYu www.htsemi.com
semiconductor

Date:2011/05