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STD15N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE V DSS R DS( on) ID
STD15N06 60 V < 0.1 15 A

s TYPICAL RDS(on) = 0.075
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
3
s
2 3
s HIGH CURRENT CAPABILITY 1
s 175oC OPERATING TEMPERATURE
1
s APPLICATION ORIENTED
CHARACTERIZATION IPAK DPAK
s THROUGH-HOLE IPAK (TO-251) POWER TO-251 TO-252
PACKAGE IN TUBE (SUFFIX "-1") (Suffix "-1") (Suffix "T4")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")

APPLICATIONS INTERNAL SCHEMATIC DIAGRAM
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VD S Drain-source Voltage (V GS = 0) 60 V
V DG R Drain- gate Voltage (R GS = 20 k) 60 V
V GS Gate-source Voltage