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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW32
UHF linear power transistor
Product specification August 1986
Philips Semiconductors Product specification
UHF linear power transistor BLW32
DESCRIPTION area. The combination of optimum
thermal design and the application of
N-P-N silicon planar epitaxial
gold sandwich metallization
transistor primarily intended for use in
realizes excellent reliability
linear u.h.f. amplifiers for television
properties.
transmitters and transposers. The
excellent d.c. dissipation The transistor has a 1/4" capstan
properties for class-A operation are envelope with ceramic cap.
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION fvision VCE IC Th dim (1) Po sync (1) Gp
MHz V mA