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Philips Semiconductors Product specification

TrenchMOSTM transistor BUK9505-30A
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope using 'trench' VDS Drain-source voltage 30 V
technology which features very low ID Drain current (DC) 75 A
on-state resistance. It is intended for Ptot Total power dissipation 230 W
use in automotive and general Tj Junction temperature 175