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2SD1898
Epitaxial Planar NPN Transistors SOT-89
1
2
1. BASE 3
2. COLLECTOR
3. EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Limits Unit
Collector-Base Voltage VCBO 100 Vdc
Collector-Emitter Voltage VCEO 80 Vdc
Emitter-Base Voltage VEBO 5 Vdc
IC 1 A(DC)
Collector Current
I CP 2 A (Pulse)*
Collector Power Dissipation PC 0.5 W
Junction Temperature, Storage Temperature Tj , Tstg 150, -55 to +150 C
* Single pulse Pw = 20ms
C
ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted )
Parameter Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage(Ic=50uA, I E =0) BV CBO 100 - - V
Collector-Emitter Breakdown Voltage(Ic=1mA,I B=0 ) BV CEO 80 - - V
Emitter-Base Breakdown Voltage(I E =50uA, I C =0) BVEBO 5 - - V
Collector Cutoff Current(VCB=80V, I E =0) ICBO - - 1 uA
Emitter Cutoff Current(VEB=4V, IC =0) IEBO - - 1 uA
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2SD1898
ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) (Countinued)
C
Parameter Symbol Min Typ Max Unit
DC Current Gain (VCE=3V, Ic=500mA) h FE 82 - 390 -
Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA) V CE(sat) - - 0.4 V
Transition Frequency (VCE=10V, Ic=50mA, f=100MHz) fT - 100 - MHz
Output Capacitance (VCB=10V, I E =0A, f=1MHz) Cob - 20 - pF
CLASSIFICATION OF hFE
Marking DF
Rank P Q R
Range 82-180 120-270 180-390
ELECTRICAL CHARACTERISTIC CURVES
1000 T a=25