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BUK9Y53-100B
N-channel TrenchMOS logic level FET
Rev. 01 -- 30 August 2007 Product data sheet




1. Product profile

1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology.

1.2 Features
I Very low on-state resistance I Q101 compliant
I 175