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HD1530JL
High Voltage NPN Power Transistor
for High Definition and New Super-Slim CRT Display
PRELIMINARY DATA
Features Figure 1. Package
STATE-OF-THE-ART TECHNOLOGY:
DIFFUSED COLLECTOR "ENHANCED
GENERATION" EHVS1
WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
LESS SENSITIVE TO OPERATING
TEMPERATURE VARIATION

Applications 3
2
HORIZONTAL DEFLECTION OUTPUT FOR
1
DIGITAL TV, HDTV, AND HIGH -END
TO-264
MONITORS

Description
Figure 2. Internal Schematic Diagram
The device uses a Diffused Collector in Planar
technology which adopts "Enhanced High Voltage
Structure" (EHVS1) that was developed to fit
High-Definition CRT displays.
The new HD product series features improved
silicon efficiency, bringing updated performance to
Horizontal Deflection output stages.

Table 1. Order Codes

Part Number Marking Package Packing

HD1530JL HD1530JL TO-264 TUBE

rev.1
July 2005 1/5
www.st.com 5
HD1530JL

Table 2. Absolute Maximum Rating
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1500 V
VCEO Collector-Emitter Voltage (IB = 0) 700 V
VEBO Emitte-Base Voltage (IC = 0) 10 V
IC Collector Current 26 A
ICM Collector Peak Current (tP < 5ms) 40 A
IB Base Current 10 A
IBM Base Peak Current (tP < 5ms) 20 A
PTOT Total dissipation at Tc = 25