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CED04N65/CEU04N65
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES

650V, 3.2A, RDS(ON) = 2.8 @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead-free plating ; RoHS compliant. D

TO-251 & TO-252 package.

D G

G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK) S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS