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SSD02N65
2A , 650V , RDS(ON) 8
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET

RoHS Compliant Product
A suffix of "-C" specifies halogen free

DESCRIPTION TO-252(D-Pack)
The SSD02N65 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .

FEATURES A
B C
D
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline GE
100% EAS Guaranteed
Green Device Available
K HF N
O
P
M J
MARKING 2
Drain
Millimeter Millimeter
REF. REF.
2N65 Min. Max. Min. Max.
Date Code A 6.35 6.80 J 2.30 REF.
1 B 5.20 5.50 K 0.64 0.90
Gate C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
PACKAGE INFORMATION F
G
2.40
5.40
3.0
6.25
P 0.43 0.58

3 H 0.64 1.20
Package MPQ Leader Size Source
TO-252 2.5K 13 inch

ABSOLUTE MAXIMUM RATINGS (TA=25