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SEMICONDUCTOR KHB9D5N20D
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for electronic ballast and C D L
A _
6.60 + 0.20
switch mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
F _
2.30 + 0.10
FEATURES G 0.96 MAX
H 0.90 MAX
H
VDSS=200V, ID=9.5A J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Drain-Source ON Resistance L _
0.50 + 0.10
F F M M _
0.50 + 0.10
: RDS(ON)=400m @VGS = 10V N 0.70 MIN
Qg(typ.)=18.5nC O 0.1 MAX
1 2 3
O
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 200 V DPAK (1)
Gate-Source Voltage VGSS 30 V
@TC=25 ID 9.5
Drain Current A
Pulsed (Note1) IDP 38
Single Pulsed Avalanche Energy EAS 180 mJ
(Note 2)
Repetitive Avalanche Energy EAR 8.7 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 5.5 V/ns
(Note 3)
Drain Power
Tc=25 PD 54 W
Dissipation
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.3 /W
Thermal Resistance, Junction-to-
RthJA 50 /W
Ambient
PIN CONNECTION
D
G
S
2007. 12. 26 Revision No : 0 1/7
KHB9D5N20D
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 200 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.19 - V/
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 1 A
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4.75A - 345 400 m
Forward Transconductance gFS VDS=40V, ID=4.75A (Note4) - 6.7 - S
Dynamic
Total Gate Charge Qg - 18.5 23
VDS=160V, ID=9.5A
Gate-Source Charge Qgs - 2.7 - nC
VGS=10V (Note4, 5)
Gate-Drain Charge Qgd - 9 -
Turn-on Delay time td(on) - 11 32
Turn-on Rise time tr VDD=100V, RG=25 - 62 135
ns
Turn-off Delay time td(off) ID=9.5A (Note4, 5) - 46 102
Turn-off Fall time tf - 80 170
Input Capacitance Ciss - 387 503
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 96 125 pF
Reverse Transfer Capacitance Crss - 34 45
Source-Drain Diode Ratings
Continuous Source Current IS - - 9.5
VGS Pulsed Source Current ISP - - 38
Diode Forward Voltage VSD IS=9.5A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=9.5A, VGS=0V, - 130 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s (Note 4) - 0.6 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =3mH, IAS=9.5A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 9.5A, dI/dt 300A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
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