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SEMICONDUCTOR KMA7D0NP30Q
TECHNICAL DATA N and P-CH Trench MOSFET
General Description
Switching regulator and DC-DC converter applications.
It s mainly suitable for power management in notebook,
portable equipment and battery powered systems.
A
FEATURES 8 5
N-Channel B1 B2
T
L
: VDSS=30V, ID=7A. 1 4
: RDS(ON)=17m (Typ.) @ VGS=10V.
: RDS(ON)=22m (Typ.) @ VGS=4.5V. DIM MILLIMETERS
A _
4.9 + 0.1
P-Channel B1 _
3.9 + 0.1
B2 _
6.0 + 0.2
: VDSS=-30V, ID=-5.5A. D _
0.4 + 0.1
: RDS(ON)=35m (Typ.) @ VGS=-10V. G 0.15+0.1/-0.05
H _
1.5 + 0.2
H
: RDS(ON)=51m (Typ.) @ VGS=-4.5V. L _
0.75 + 0.2
D P G P 1.27
Super high dense cell design for extermely low RDS(ON). T 0.5 MAX
Reliable and rugged.
FLP-8
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Drain-Source Voltage VDSS 30 -30 V
Gate-Source Voltage VGSS 20 20 V
DC ID * 7 -5.5
Drain Curren A
Pulsed IDP 28 -20
Ta=25 2
Drain Power Dissipation PD * W
Ta=100 0.8
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Case RthJA * 62.5 /W
* : Surface Mounted on FR4 Board, t 10sec.
D1 D1 S2
PIN CONNECTION (TOP VIEW)
S1 1 8 D1
G2
G1 2 7 D1 G1
S2 3 6 D2
G2 4 5 D2
S1 D2 D2
N-Channel MOSFET P-Channel MOSFET
2005. 10. 25 Revision No : 3 1/8
KMA7D0NP30Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
N-Ch 30 - -
Drain-Source Breakdown Voltage BVDSS ID= 250 A, VGS=0V V
P-Ch -30 - -
VDS=24V, VGS=0V N-Ch - - 1
Drain Cut-off Current IDSS A
VDS=-24V, VGS=0V P-Ch - - -1
N-Ch 1 1.5 2
Gate Threshold Voltage Vth VDS=VGS, ID= 250 A V
P-Ch -1 -1.5 -2
N-Ch
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
P-Ch
VGS=10V, ID=7A - 17 24
N-Ch
VGS=4.5V, ID=5A - 22 30
Drain-Source ON Resistance RDS(ON)(Note 1) m
VGS=-10V, ID=-5.5A - 35 56
P-Ch
VGS=-4.5V, ID=-4A - 51 78
IDR=2A, VGS=0V N-Ch - 0.7 1.3
Source-Drain Diode Forward Voltage VSD (Note 1) V
IDR=-2.3A, VGS=0V P-Ch - -0.7 -1.3
Dynamic (Note 2)
N-Ch - 19 28
Total Gate Charge Qg N-Channel
VDS=15V, ID=7A P-Ch - 33 43
VGS=10V N-Ch - 1.6 -
Gate-Source Charge Qgs nC
P-Channel P-Ch - 5 -
VDS=-15V, ID=-5.5A N-Ch - 3.6 -
Gate-Drain Charge Qgd VGS=-10V (Fig.1)
P-Ch - 4 -
N-Ch - 11 20
Turn-on Delay time td(on) N-Channel
P-Ch - 12 24
VDD=15V, ID=2A
VIN=10V, RG=6 N-Ch - 17 28
Turn-on Rise time tr
RL=7.5 P-Ch - 15 29
ns
P-Channel N-Ch - 36 62
Turn-off Delay time td(off)
VDD=-15V, ID=-2A P-Ch - 35 60
VIN=-10V, RG=6
RL=7.5 (Fig.2) N-Ch - 20 36
Turn-off Fall time tf
P-Ch - 15 30
N-Ch - 835 -
Input Capacitance Ciss N-Channel
VDS=25V, VGS=0V P-Ch - 950 -
f=1.0MHz N-Ch - 15 -
Reverse Transfer Capacitance Crss pF
P-Channel P-Ch - 110 -
VDS=-25V, VGS=0V N-Ch - 145 -
Output Capacitance Coss f=1.0MHz
P-Ch - 160 -
Note 1) Pulse test : Pulse width 300 , duty cycle 2%
Note 2) Guaranteed by design, not subject to production testing.
2005. 10. 25 Revision No : 3 2/8
KMA7D0NP30Q
N-Channel
ID - VDS ID - VGS
30 30
VGS = 4, 5, 6, 7, 8, 9, 10V
25 25
Drain Current ID (A)
Drain Current ID (A)
20 20
15 VGS=3V
15 Tj=125 C
10 10
Tj= -55 C
Tj=25 C
5 5
VGS=2V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Vth - Tj RDS(ON) - ID
Normalized Threshold Voltage Vth (V)
1.6 40
IDS= 250