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PHP20N06T; PHB20N06T
N-channel TrenchMOSTM transistor
Rev. 01 -- 22 February 2001 Product specification

1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM1 technology.

Product availability:
PHP20N06T in SOT78 (TO-220AB)
PHB20N06T in SOT404 (D 2-PAK).

2. Features
s Very low on-state resistance
s Fast switching.

3. Applications
s Switched mode power supplies
s DC to DC converters.
c

4. Pinning information
c

Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb
2 drain (d) [1] mb

d
3 source (s)
mb mounting base;
connected to drain (d) g

MBB076 s
2

MBK106 1 3 MBK116
1 2 3

SOT78 (TO-220AB) SOT404 (D2-PAK)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors PHP20N06T; PHB20N06T
N-channel TrenchMOSTM transistor

5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 175 oC - 55 V
ID drain current (DC) Tmb = 25