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2SA1162
SOT-23 Transistor(PNP)
1. BASE
SOT-23
2. EMITTER
3. COLLECTOR
Features
Low noise: NF=1dB(Typ.)10dB(Max.)
Complementary to 2SC2712
Small package
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -150 mA
PC Collector Power Dissipation 150 mW
TJ Junction Temperature 125
Tstg Storage Temperature -55-125
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A
DC current gain hFE VCE=-6V,IC=-2mA 70 400
Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.3 V
Transition frequency fT VCE=-10V,IC=-1mA 80 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF
VCE=-6V,IC=0.1mA,f=1KHz,
Noise figure NF 10 dB
Rg=10K
CLASSIFICATION OF hFE
Rank O Y GR(G)
Range 70-140 120-240 200-400
Marking SO SY SG
2SA1162
SOT-23 Transistor(PNP)
Typical Characteristics