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STP22NM60 - STF22NM60
STB22NM60 - STB22NM60-1 - STW22NM60
N-CHANNEL 600V - 0.19 - 22A TO-220/FP/D2PAK/I2PAK/TO-247
MDmeshTMPower MOSFET
ADVANCED DATA
TYPE VDSS RDS(on) Rds(on)*Qg ID
STP22NM60 600 V < 0.25 7.6 *nC 22 A
STF22NM60 600 V < 0.25 7.6 *nC 22 A
STB22NM60 600 V < 0.25 7.6 *nC 22 A 3 3
< 0.25 *nC 2 2
STB22NM60-1 600 V 7.6 22 A 1 1
STW22NM60 600 V < 0.25 7.6 *nC 22 A TO-220 TO-220FP
s TYPICAL RDS(on) = 0.19
s HIGH dv/dt AND AVALANCHE CAPABILITIES 2
3
1
s 100% AVALANCHE TESTED TO-247
s LOW INPUT CAPACITANCE AND GATE CHARGE
3 3
s LOW GATE INPUT RESISTANCE 12 1
I2PAK D2PAK
DESCRIPTION
This improved version of MDmeshTM which is based
on Multiple Drain process represents the new bench- INTERNAL SCHEMATIC DIAGRAM
mark in high voltage MOSFETs. The resulting product
exhibits even lower on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company's proprietary strip technique
yields overall performances that are significantly better
than that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP22NM60 P22NM60 TO-220 TUBE
STF22NM60 F22NM60 TO-220FP TUBE
STB22NM60 B22NM60T4 D