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PZTA44
SOT-223 Transistor(NPN)
1. BASE
2. COLLECTOR SOT-223
1
3. EMITTER
Features
Low current : 300mA(max)
High voltage: VCEO=400V
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 500 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 6 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous 300 mA
PC Collector Power Dissipation 1000 mW
Tj Junction Temperature 150
Tstg Storage Temperature -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 500 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 6 V
Collector cut-off current ICBO VCB=400V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V,IC=0 0.1 A
hFE(1) VCE=10V,IC=1mA 40
hFE(2) VCE=10V,IC=10mA 50 200
DC current gain
hFE(3) VCE=10V,IC=50mA 45
hFE(4) VCE=10V,IC=100mA 40
VCE(sat) IC=1mA,IB=0.1mA 0.4 V
Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.5 V
VCE(sat) IC=50mA,IB=5mA 0.75 V
Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 0.85 V
Transition frequency fT VCE=10V,IC=10mA,f=100MHz 20 MHz
Collector capacitance CC VCB=20V,IE=0,f=1MHz 7 pF
Emitter capacitance Ce VEB=0.5V,IC=0,f=1MHz 180 pF
PZTA44
SOT-223 Transistor(NPN)
Typical characteristics