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Philips Semiconductors Product specification
PowerMOS transistor BUK100-50GS
TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected power MOSFET
in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V
as a general purpose switch for ID Continuous drain current 15 A
automotive systems and other PD Total power dissipation 40 W
applications. Tj Continuous junction temperature 150