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Philips Semiconductors Product specification

PowerMOS transistor BUK563-48C
Voltage clamped logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT
mode logic level field-effect power
transistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 48 58 V
suitable for surface mount ID Drain current (DC) 21 A
applications. Ptot Total power dissipation 75 W
The device is intended for use in Tj Junction temperature 175