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SS8550
SOT-23 Transistor(PNP)
SOT-23
1. Base
2.Emitter
3.Collector
Features
Complimentary to SS8050
MARKING: Y2
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
hFE(1) VCE=-1V, IC=-100mA 120 400
DC current gain
hFE(2) VCE=-1V, IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V
Base-emitter on voltage VBE(on) IC=-1V,VCE=-10mA -1 V
Base-emitter positive favor voltage VBEF IB=-1A -1.55 V
VCE= -10V, IC= -50mA
Transition frequency fT 100 MHz
f=30MHz
output capacitance Cob (VCB=-10V,IE=0,f=1MHz) 20 pF
CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400
SS8550
SOT-23 Transistor(PNP)