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2SB1 1 8 9
TRANSISTOR(PNP)
FEATURES
High breakdown voltage
Complements to 2SD1767
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.7 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -80 V
Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,IB=0 -80 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 A
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 A
DC current gain hFE VCE=-3V,IC=-100mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.4 V
Transition frequency fT VCE=-10V,IC=-50mA,f=100MHz 100 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
Marking BDP BDQ BDR
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
2SB1 1 8 9
Typical Characteristics 2SB1189
2
JinYu www.htsemi.com
semiconductor
Date:2011/05