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2SK1365
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5)
2SK1365
Switching Power Supply Applications
Unit: mm
Low drain-source ON resistance : RDS (ON) = 1.5 (typ.)
High forward transfer admittance : |Yfs| = 4.0 S (typ.)
Low leakage current : IDSS = 300 A (max) (VDS = 800 V)
Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25