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STP80NF10
STP80NF10FP
N-CHANNEL 100V - 0.012 - 80A TO-220/TO-220FP
LOW GATE CHARGE STripFETTMII POWER MOSFET

TYPE VDSS RDS(on) ID

STP80NF10 100 V < 0.015 80 A
STP80NF10FP 100 V < 0.015 38 A
s TYPICAL RDS(on) = 0.012
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED 3 3
2 2
CHARACTERIZATION 1 1

TO-220 TO-220FP
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and INTERNAL SCHEMATIC DIAGRAM
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.

APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS

s UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP80NF10 STP80NF10FP
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
VGS Gate- source Voltage