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BDX53F
BDX54F
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MONOLITHIC DARLINGTON
CONFIGURATION
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE

APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL 3
EQUIPMENT 2
1

DESCRIPTION
The BDX53F is a silicon epitaxial-base NPN TO-220
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-220
plastic package. It is intented for use in power
linear and switching applications.
The complementary PNP types is BDX54F.
INTERNAL SCHEMATIC DIAGRAM




R1 Typ. = 10 K R2 Typ. = 150


ABSOLUTE MAXIMUM RATINGS



Symbol Parameter Value Unit
NPN BDX53F
PNP BDX54F
V CBO Collector-Base Voltage (I E = 0) 160 V
V CEO Collector-Emitter Voltage (I B = 0) 160 V
V EBO Emitter-base Voltage (I C = 0) 5 V
IC Collector Current 8 A
I CM Collector Peak Current 12 A
IB Base Current 0.2 A
P tot Total Dissipation at T c 25 C
o
60 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C

July 1997 1/4
BDX53F / BDX54F

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 2.08 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 70 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)



Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEO Collector Cut-off V CB = 80 V 0.5 mA
Current (I E = 0)
I CBO Collector Cut-off V CB = 160 V 0.2 mA
Current (I B = 0)
I EBO Emitter Cut-off Current V EB = 5 V 5 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 50 mA 160 V
Sustaining Voltage
(I B = 0)
V CE(sat) Collector-emitter IC = 2 A I B =10 mA 2 V
Saturation Voltage
V BE(sat) Base-emitter IC = 2 A I B =10 mA 2.5 V
Saturation Voltage
h FE DC Current Gain IC = 2 A V CE = 5 V 500
IC = 3 A V CE = 5 V 150
VF Parallel Diode Forward IF = 2 A 2.5 V
Voltage
hfe Small Signal Current I C = 0.5 A
Gain f = 1MHz V CE = 2 V 20
Pulsed: Pulse duration = 300