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8050S(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
4.45
2. COLLECTOR 5.21
3. BASE
1.25MAX
4.32
2.92 5.33
MIN
Features
MIN
6.35 MIN
Seating Plane
12.7
0.48
0.41
Complimentary to 8550S
Collector current: IC=0.5A 3.43
0.53
0.41
MIN
2.41
2.67
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units 3.18
4.19 2.03
2.67
VCBO Collector-Base Voltage 40 V 1.14
1.40
VCEO Collector-Emitter Voltage 25 V 2.03
2.67
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.625 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 A
Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
hFE(1) VCE= 1V, IC= 50mA 85 400
DC current gain
hFE(2) VCE= 1V, IC= 500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V
VCE= 6V, IC=20mA
Transition frequency fT 150 MHz
f =30MHz
CLASSIFICATION OF hFE(1)
Rank B C D D3
Range 85-160 120-200 160-300 300-400
8050S(NPN)
TO-92 Bipolar Transistors
Typical Characteristics