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2SD1899
Transistor(NPN)
1.BASE
TO-252-2L
2.COLLECTOR
3.EMITTER
Features
High hFE hFE=100 to 400
Low VCE(sat) VCE(sat)=0.25V
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC =1mA,IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 7 V
Collector cut-off current ICBO VCB=60V,IE=0 10 A
Emitter cut-off current IEBO VEB=7V,IC=0 10 A
hFE(1) VCE=2V,IC=200mA 60
DC current gain hFE(2) VCE=2V,IC=600mA 100 400
hFE(3) VCE=2V,IC=2A 50
Collector-emitter saturation voltage VCE(sat) IC=1.5A,IB=150mA 0.25 V
Base-emitter saturation voltage VBE(sat) IC=1.5A,IB=150mA 1.2 V
Transition frequency fT VCE=5V,IC=1.5A 120 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 30 pF
Turn on Time ton 0.5
Switching Time Storage Time tstg VCC=10V,IC=1A,IB1=-IB2=-0.1A 2.0 s
Fall Time tf 0.5
CLASSIFICATION OF hFE(2)
Rank M L K
Range 100-200 160-320 200-400
2SD1899
Transistor(NPN)
Typical Characteristics
2SD1899
Transistor(NPN)