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BUK654R6-55C
N-channel TrenchMOS intermediate level FET
Rev. 02 -- 14 October 2010 Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for thermally demanding
Suitable for intermediate level gate environments due to 175