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STP9NB50
STP9NB50FP
N-CHANNEL 500V - 0.75 - 8.6 A TO-220/TO-220FP
PowerMeshTM MOSFET
TYPE VDSS RDS(on) ID

STP9NB50 500 V < 0.85 8.6 A
STP9NB50FP 500 V < 0.85 4.9 A
s TYPICAL RDS(on) = 0.75
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3 3
s VERY LOW INTRINSIC CAPACITANCES 2 2
1 1
s GATE CHARGE MINIMIZED
TO-220 TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
t( s)
uc
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
d
ro
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
P
te
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
le
APPLICATIONS
so
Ob
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING
-
(s)
EQUIPMENT AND UNINTERRUPTIBLE


ct
POWER SUPPLIES AND MOTOR DRIVE


du
ABSOLUTE MAXIMUM RATINGS
Symbol
o Parameter Value Unit


VDS
e Pr
Drain-source Voltage (VGS = 0)
STP9NB50
500
STP9NB50FP
V


let
VDGR Drain-gate Voltage (RGS = 20 k) 500 V
VGS
o Gate- source Voltage