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BD336
SILICON PNP POWER DARLINGTON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s PNP DARLINGTON
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE AMPLIFIERS
3
DESCRIPTION 2
1
The BD336 is a silicon epitaxial-base PNP
transistor in Darlingon configuration mounted in
SOT-82 plastic package. SOT-82
It is inteded for use in audio output stages
general amplifier and switching applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) -100 V
V CEO Collector-Emitter Voltage (I B = 0) -100 V
V EBO Emitter-Base Voltage (I C = 0) -5 V
IC Collector Current -6 A
I CM Collector Peak Current (t p < 10ms) -10 A
IB Base Current -0.15 A
P tot Total Dissipation at T c 25 o C 60 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
July 1997 1/4
BD336
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 2.08 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = -100 V -0.2 mA
o
Current (I E = 0) V CB = -100 V T C = 150 C -2 mA
I CEO Collector Cut-off V CE = -50 V -0.5 mA
Current (I B = 0)
I EBO Emitter Cut-off Current V EB = -5 V -5 mA
(I C = 0)
V CE(sat) Collector-Emitter I C = -3 A I B = -12 mA -2 V
Saturation Voltage
V BE Base-Emitter Voltage I C = -3 A V CE = -3 V -2.5 V
h FE DC Current Gain I C = -0.5 A V CE = -3 V 2700
I C = -3 A V CE = -3 V 750
I C = -6 A V CE = -3 V 400
VF Parallel Diode Forward I F = -3 A -1.8 V
Voltage
hfe Small Signal Current I C = -3 A V CE = -3 V f = 1MHz 150
Gain
t on Turn on Time I C = -3 A V CC = -30 V 1 2