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Philips Semiconductors 1880 MHz PA Driver with BFG480W

1880 MHz PA Driver with BFG480W

Application Note
JL-9902v0

Author

Jarek Lucek

June 1, 1999

Discrete Semiconductors - Mansfield
171 Forbes Blvd.
Mansfield, MA 02048

Abstract
th
BFG480W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications
in AMPS, TDMA, CDMA and GSM systems. BFG80W's performance is superior at 1880 MHz, 3.6V applications.
Under CW mode, the part is capable of P1dB=20dBm, efficiency of over 40% and typical Gp of 15 dB. BFG480W
delivers 20 dBm of linear output power under TDMA with a typical G of 15 dB and efficiency of above 30%.
p
Under CDMA mode, BFG480W delivers 19 dBm of linear output power with a typical G of above 15 dB and
p
efficiency of 30%.
Philips Semiconductors 1880 MHz PA Driver with BFG480W

INTRODUCTION

BFG480W is Philips Semiconductors' 5th generation silicon bipolar RF wideband transistor in a
SOT343R plastic SMD package. The transistor delivers superior performance at frequencies below 3
GHz. It is manufactured according to the double poly process and characterised by a high transition
frequency (fT > 20 GHz) at low sub 3 Volt supply voltages. This application notes describes BFG480W
performance at 1880 MHz operation under CW, 2 Tone, TDMA and CDMA conditions.

PERFORMANCE OVERVIEW

The table below summarises BFG480W's typical performance capabilities under different signal
conditions.

P1dB or Plinear* Gain** Efficiency***
System Vsupply
dBm dB %
Icq=10mA Icq=20mA Icq=10mA Icq=20mA Icq=10mA Icq=20mA

3.0 Volts 19 20 14.5 14.7 37 37
CW 3.6 Volts 21 21 14.9 14.8 38 36
3.0 Volts 16 15.5 15 15.5 27 24
2Tone 3.6 Volts 17.5 16.5 16 16 27 22
3.0 Volts 19 19 14.5 15 35 34
TDMA 3.6 Volts 20.5 20 15 14.7 33 33
3.0 Volts 17.5 17.5 15 15.5 30 30
CDMA 3.6 Volts 19 18.5 15.5 16 30 27
Table 1: BFG480W 1880 MHz PA driver performance summary

*- CW - load power @ P1dB
2Tone - load power represents linear average power @ IMD levels reaching