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SEMICONDUCTOR KTA2014F
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
E
Excellent hFE Linearity
B
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTC4075F. 2 DIM MILLIMETERS
A
G
D
A _
0.6 + 0.05
Thin Fine Pitch Small Package. 3 B _
0.8 + 0.05
K
1 C 0.38+0.02/-0.04
D _
0.2 + 0.05
E _
1.0 + 0.05
G _
0.35+ 0.05
J _
0.1 + 0.05
K _
0.15 + 0.05
MAXIMUM RATING (Ta=25 )
C
CHARACTERISTIC SYMBOL RATING UNIT
J
Collector-Base Voltage VCBO -50 V
1. EMITTER
Collector-Emitter Voltage VCEO -50 V 2. BASE
Emitter-Base Voltage VEBO -5 V 3. COLLECTOR
Collector Current IC -150 mA
TFSM
Base Current IB -30 mA
Collector Power Dissipation PC 50 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 Marking Type Name
S h FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-6V, IC=-2mA 70 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1mA 80 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4 7 pF
VCE=-6V, IC=-0.1mA
Noise Figure NF - 1.0 10 dB
f=1kHz, Rg=10k
Note : hFE Classification O(2):70 140, Y(4):120 240, GR(6):200 400
2005. 4. 21 Revision No : 0 1/3
KTA2014F
I C - VCE h FE - I C
-240 3k
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
I B =-2.0mA
Ta=25 C COMMON EMITTER
-200
DC CURRENT GAIN h FE
I B =-1.5mA
1k
-160
I B =-1.0mA 500
-120 300 Ta=100 C VCE =-6V
I B =-0.5mA Ta=25 C
-80
Ta=-25 C
I B =-0.2mA 100 VCE =-1V
-40
50
I B =0mA
0 30
0 -1 -2 -3 -4 -5 -6 -7 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
COLLECTOR-EMITTER SATURATION
-1 -10
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
-0.5 I C /I B =10 -5 I C/I B=10
VOLTAGE VBE(sat) (V)
Ta=25 C
VOLTAGE VCE(sat) (V)
-0.3 -3
C
-0.1 00 -1
=1
Ta
-0.05 -0.5
-0.03 Ta=25 C
-0.3
Ta=-25 C
-0.01 -0.1
-0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
fT - IC I B - V BE
3k -1k
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER COMMON EMITTER
VCE =-10V
Ta=25 C -300 VCE =-6V
BASE CURRENT IB (