am1214,200.pdf part of ST am1214,200 am1214,200.pdf, . Electronic Components Datasheets Active components Transistors ST am1214,200.pdf text manual preview

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AM1214-200
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS

.
. REFRACTORY/GOLD METALLIZATION
PRELIMINARY DATA

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.
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE

.
.
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY

. METAL/CERAMIC HERMETIC PACKAGE
P OUT = 200 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL (M205)
hermetically sealed
ORDER CODE BRANDING
AM1214-200 1214-200

PIN CONNECTION
DESCRIPTION
The AM1214-200 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures, and wiil tolerate severe mismatch and over-
drive conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
AM1214-200 is supplied in the BIGPACTM hermetic 1. Collector 3. Emitter
metal/ceramic package with internal input/output 2. Base 4. Base
matching structures.

ABSOLUTE MAXIMUM RATINGS (T case = 25