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SEMICONDUCTOR KTD1303
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
AUDIO MUTING APPLICATION.
FEATURES B
High Emitter-Base Voltage : VEBO=12V(Min.).
A
High Reverse hFE
: Reverse hFE=20(Min.) (VCE=2V, IC=4mA). O DIM MILLIMETERS
F
A 3.20 MAX
Low on Resistance :RON=0.6 (Typ.) (IB=1mA). H M B 4.30 MAX
C 0.55 MAX
G
D _
2.40 + 0.15
E 1.27
F 2.30
C _
G 14.00+ 0.50
H 0.60 MAX
MAXIMUM RATING (Ta=25 ) J 1.05
E E
K 1.45
CHARACTERISTIC SYMBOL RATING UNIT L 25
J
M 0.80
D
Collector-Base Voltage VCBO 25 V
K
1 2 3 N N 0.55 MAX
O 0.75
Collector-Emitter Voltage VCEO 20 V L
1. EMITTER
Emitter-Base Voltage VEBO 12 V
2. COLLECTOR
Collector Current IC 300 mA 3. BASE
Base Current IB 30 mA
Collector Power Dissipation PC 400 mW TO-92M
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=25V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=12V, IC=0 - - 0.1 A
hFE(1) (FOR) VCE=2V, IC=4mA 200 - 800
DC Current Gain
hFE(2) (REV) VCE=2V, IC=4mA 20 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - - 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=1mA - 60 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 10 - pF
On Resistance Ron f=1KHz, IB=1mA, VIN=0.3V - 0.6 -
1995. 10. 17 Revision No : 0 1/2
KTD1303
1995. 10. 17 Revision No : 0 2/2