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SEMICONDUCTOR KTC3780U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
E
FEATURES M B M
Low Noise Figure, High Gain. DIM MILLIMETERS
A _
2.00 + 0.20
2 D
NF=1.4dB, |S21e| =12dB (f=1GHz). 2 B _
1.25 + 0.15
A
_
J
C 0.90 + 0.10
G
1 3 D 0.3+0.10/-0.05
E _
2.10 + 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
MAXIMUM RATING (Ta=25 ) K 0.00-0.10
L 0.70
CHARACTERISTIC SYMBOL RATING UNIT
C
H
L
M _
0.42 + 0.10
N 0.10 MIN
Collector-Base Voltage VCBO 15 V N K N
Collector-Emitter Voltage VCEO 6 V
VEBO 1. EMITTER
Emitter-Base Voltage 1.5 V
2. BASE
Collector Current IC 50 mA 3. COLLECTOR
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 125