Text preview for : stw34nb20.pdf part of ST stw34nb20 . Electronic Components Datasheets Active components Transistors ST stw34nb20.pdf
Back to : stw34nb20.pdf | Home
STW34NB20
N-CHANNEL 200V - 0.062 - 34A TO-247
PowerMESHTM MOSFET
Table 1. General Features Figure 1. Package
Type VDSS RDS(on) ID
STW34NB20 200 V < 0.075 34 A
FEATURES SUMMARY
TYPICAL RDS(on) = 0.062
EXTREMELY HIGH dv/dt CAPABILITY
3
100% AVALANCHE TESTED 2
VERY LOW INTRINSIC CAPACITANCES 1
GATE CHARGE MINIMIZED
TO-247
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand- Figure 2. Internal Schematic Diagram
ing performances. The new patent pending strip
layout coupled with the Company's proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/dt
capabilities and unrivalled gate charge and switch-
ing characteristics.
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
HIGH CURRENT, HIGH SPEED SWITCHING
Table 2. Order Codes
Part Number Marking Package Packaging
STW34NB20 W34NB20 TO-247 TUBE
REV. 2
April 2004 1/10
STW34NB20
Table 3. Absolute Maximum Ratings
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain- gate Voltage (RGS = 20 k) 200 V
VGS Gate-source Voltage