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KSC5338D NPN SILICON TRANSISTOR
TO-220
HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION
z Wide S.O.A.
z Built-in Free-wheel Diode
z Suitable for ballast App;ication
z Low Variable Storage-time spread
ABSOLUTE MIXIMUM RATING
Characteristic Symbol Rating Unit 1.Base 2.Collector 3.Emitter
Collector Base Voltage VCBO 1000 V
Collector Emitter Voltage VCEO 450 V
Internal schematic diagram
Emitter Base Voltage VEBO 9 V
C (2)
Collector Current DC IC 5 A
*Pulse ICP 10 A
Base Current DC IB 2 A
*Pulse IBP 4 A (1)
Power Dissipation(Tc=25 )& PC 75 W
Junction Temperature TJ 150 & B
Storage Temperature T STG -55 ~ 150 &
ELECTRICAL CHARACTERISTICS (T C=25&) E (3)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Base Breakdown Voltage BVCBO ~
IC=1 , IE=0 1000 - - V
Collector Emitter Breakdown Voltage BVCEO ~
IC=5 , IB=0 450 - - V
Emitter Cutoff Current BVEBO ~
IE=1 , IC=0 12 - - V
Collextor Cutoff Current ICBO VCB=800V, IE=0 - - 10 }
Emitter Cutoff Current IEBO VEB = 9V, IC = 0 - - 10 }
DC Current Gain hFE1 VCE=1V, IC=0.8A 15 - -
hFE2 VCE=1V,IC=2A 6 - -
Collector Emitter Saturation Voltage VCE(sat) IC=0.8A, IB=0.08A - - 0.5 V
IC=2A, IB=0.4A 0.75 V
Base Emitter Saturation Voltage VBE(sat) IC=0.8A, IB=0.08A - - 1.0 V
IC=2A, IB=0.4A 1.0 V
Output Capacitance COB VCB = 10V, f=1 - - 100 pF
Turn-on time tON VCC=250V - 500 750 r
Storage-time tSTG IC =2.5A, IB1 = 0.5A - 1 2 s
Falling time tF IB2=-1A - 0.1 0.2 s
Storage-time tSTG VCC=15V,VZ=300V - 2.1 2.4 s
Falling time tF IC = 2A,IB1 = 400~ - 95 150 r
IB2 = -400~
LC=200 H