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STL160N3LLH6
N-channel 30 V, 0.0011 35 A PowerFLATTM (5x6)
,
STripFETTM VI DeepGATETM Power MOSFET
Features
RDS(on)
Order code VDSS ID
max
STL160N3LLH6 30 V 0.0013 35 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on) PowerFLATTM ( 5x6 )
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications Figure 1. Internal schematic diagram
Description
The STL160N3LLH6 is a N-channel 30 V Power
MOSFET. This product utilizes the 6th generation
of design rules of ST's proprietary STripFETTM
technology, with a new gate structure.The
resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
Table 1. Device summary
Order code Marking Package Packaging
STL160N3LLH6 160N3LLH6 PowerFLATTM (5x6) Tape and reel
November 2010 Doc ID 18223 Rev 1 1/14
www.st.com 14
Contents STL160N3LLH6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 18223 Rev 1
STL160N3LLH6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage