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BUF420
BUF420M
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPES
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s VERY HIGH SWITCHING SPEED
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS: 3 1
s SWITCH MODE POWER SUPPLIES 1
2 2
s MOTOR CONTROL
DESCRIPTION TO-218 TO-3
The BUF420 and BUF420M are manufactured (version "R")
using High Voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage capacity. They use a Cellular Emitter
structure with planar edge termination to enhance
switching speeds while maintaining a wide INTERNAL SCHEMATIC DIAGRAM
RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications. For TO-3 :
C = Tab
E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Un it
V CEV Collector-Emitter Voltage (VBE = -1.5 V) 850 V
V CEO Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 30 A
I CM Collector Peak Current (tp < 5 ms) 60 A
IB Base Current 6 A
I BM Base Peak Current (tp < 5 ms) 9 A
T O-218 TO -3
o
P tot T otal Dissipation at Tc = 25 C 200 200 W
o
T s tg Storage Temperature -65 to 150 C
o
Tj Max O peration Junction Temperature 150 C
July 1997 1/7
BUF420 / BUF420M
THERMAL DATA
T O-218 TO-3
o
R t hj-ca se Thermal Resistance Junction-Case Max 0.63 0.63 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CER Collector Cut-off V CE = V CEV 0.2 mA
o
Current (R BE = 5 ) V CE = V CEV T c = 100 C 1 mA
I CEV Collector Cut-off V CE = V CEV V BE = -1.5 V 0.2 mA
o
Current (IB = 0) V CE = V CEV V BE = -1.5 V Tc =100 C 1 mA
I EBO Emitter Cut-off Current V BE = 5 V 1 mA
(I C = 0)
V CEO(sus ) Collector-Emitter I C = 200 mA L = 25 mH 450 V
Sustaining Voltage
V EBO Emitter Base Voltage I E = 50 mA 7 V
(I C = 0)
V CE(sat ) Collector-Emitter IC = 10 A IB = 1 A 0.8 V
o
Saturation Voltage IC = 10 A IB = 1 A T c =100 C 2.8 V
IC = 20 A IB = 2 A 0.5 V
o
IC = 20 A IB = 2 A T c =100 C 2 V
V BE(s at) Base-Emitter IC = 10 A IB = 1 A 0.9 V
o
Saturation Voltage IC = 10 A IB = 1 A T c =100 C 1.5 V
IC = 20 A IB = 2 A 1.1 V
o
IC = 20 A IB = 2 A T c =100 C 1.5 V
di c /dt Rate of rise on-state V CC = 300 V R C = 0 t p = 3