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STN1N20
N-channel 200 V, 1.2 1 A, SOT-223
,
MESH OVERLAYTM Power MOSFET
Features
Type VDSS RDS(on) max ID
STN1N20 200 V < 1.5 1A 4
100% avalanche tested
3
2
Application 1
SOT-223
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the latest high voltage MESH
OVERLAYTM process. The new patented STrip
layout coupled with the company's proprietary Figure 1. Internal schematic diagram
edge termination structure, makes it suitable in
converters for lighting applications.
Table 1. Device summary
Order code Marking Package Packaging
STN1N20 N1N20 SOT-223 Tape and reel
June 2011 Doc ID 6772 Rev 3 1/12
www.st.com 12
Contents STN1N20
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 6772 Rev 3
STN1N20 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS =0) 200 V
VGS Gate-source voltage