Text preview for : bf998_r.pdf part of Philips bf998 r . Electronic Components Datasheets Active components Transistors Philips bf998_r.pdf
Back to : bf998_r.pdf | Home
DISCRETE SEMICONDUCTORS
DATA SHEET
BF998; BF998R
Silicon N-channel dual-gate
MOS-FETs
Product specification 1996 Aug 01
Supersedes data of April 1991
NXP Semiconductors Product specification
Silicon N-channel dual-gate MOS-FETs BF998; BF998R
FEATURES
Short channel transistor with high forward transfer handbook, halfpage d
admittance to input capacitance ratio 4 3
Low noise gain controlled amplifier up to 1 GHz. g
2
g1
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional 1 2
communications equipment. s,b
Top view MAM039
DESCRIPTION Marking code: MOp.
Depletion type field effect transistor in a plastic
Fig.1 Simplified outline (SOT143B)
microminiature SOT143B or SOT143R package with
and symbol; BF998.
source and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
handbook, halfpage
d
CAUTION 3 4
The device is supplied in an antistatic package. The g2
gate-source input must be protected against static
g1
discharge during transport or handling.
PINNING
2 1
PIN SYMBOL DESCRIPTION s,b
Top view MAM040
1 s, b source
Marking code: MOp.
2 d drain
3 g2 gate 2 Fig.2 Simplified outline (SOT143R)
4 g1 gate 1 and symbol; BF998R.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VDS drain-source voltage 12 V
ID drain current 30 mA
Ptot total power dissipation 200 mW
yfs forward transfer admittance 24 mS
Cig1-s input capacitance at gate 1 2.1 pF
Crs reverse transfer capacitance f = 1 MHz 25 fF
F noise figure f = 800 MHz 1 dB
Tj operating junction temperature 150 C
1996 Aug 01 2
NXP Semiconductors Product specification
Silicon N-channel dual-gate MOS-FETs BF998; BF998R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 12 V
ID drain current 30 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation; BF998 up to Tamb = 60 C; see Fig.3; note 1 200 mW
up to Tamb = 50 C; see Fig.3; note 2 200 mW
Ptot total power dissipation; BF998R up to Tamb = 50 C; see Fig.4; note 1 200 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Notes
1. Device mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm.
2. Device mounted on a printed-circuit board.
MLA198 MGA002
handbook, halfpage handbook, halfpage
200 200
Ptot max (2) (1) Ptot max
(mW) (mW)
100 100
0
0 0 100 200
0 100 200
Tamb (o C) Tamb (