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R5021ANX
Transistors


10V Drive Nch MOSFET
R5021ANX

Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET TO-220FM
10.0 3.2 4.5
2.8




Features




15.0
12.0
1) Low on-resistance.




8.0
2) Fast switching speed. 1.2




2.5
1.3

3) Gate-source voltage (VGSS)




14.0
guaranteed to be 30V. 0.8

4) Drive circuits can be simple. (1)Base
2.54 2.54 0.75 2.6
(2)Collector
5) Parallel use is easy.
(1) (2) (3)

(3)Emitter




Applications
Switching



Packaging specifications Inner circuit
Package Bulk
Type Code -
Basic ordering unit (pieces) 500
R5021ANX 1




Absolute maximum ratings (Ta=25 C)
(1) (2) (3)
Parameter Symbol Limits Unit (1) Gate
(2) Drain
Drain-source voltage VDSS 500 V 1 Body Diode
(3) Source
Gate-source voltage VGSS