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SEMICONDUCTOR KF8N60P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF8N60P
This planar stripe MOSFET has better characteristics, such as fast A
O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for active power factor
E G DIM MILLIMETERS
correction and switching mode power supplies. A _
9.9 + 0.2
B
B 15.95 MAX
Q C 1.3+0.1/-0.05
FEATURES I D _
0.8 + 0.1
E _
3.6 + 0.2
VDSS=600V, ID=8A
K P F _
2.8 + 0.1
Drain-Source ON Resistance : M G 3.7
L
H 0.5+0.1/-0.05
RDS(ON)(Max)=1.05 @VGS=10V J I 1.5
Qg(typ.)= 22nC D J _
13.08 + 0.3
N N H K 1.46
L _
1.4 + 0.1
MAXIMUM RATING (Tc=25 ) M _
1.27 + 0.1
N _
2.54 + 0.2
RATING O _
4.5 + 0.2
CHARACTERISTIC SYMBOL UNIT P _
2.4 + 0.2
1 2 3 1. GATE
KF8N60P KF8N60F 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
TO-220AB
@TC=25 8 8*
ID
Drain Current @TC=100 5 5* A
IDP KF8N60F
Pulsed (Note1) 18 18*
A C
Single Pulsed Avalanche Energy EAS 230 mJ
(Note 2) F
O
Repetitive Avalanche Energy EAR 14.7 mJ
(Note 1) E DIM MILLIMETERS
B
A _
10.16 + 0.2
Peak Diode Recovery dv/dt
G
dv/dt 4.5 V/ns B _
15.87 + 0.2
(Note 3) _
C 2.54 + 0.2
Drain Power Tc=25 160 52 W D _
0.8 + 0.1
PD E _
3.18 + 0.1
Dissipation Derate above 25 1.28 0.42 W/
K
F _
3.3 + 0.1
G _
12.57 + 0.2
Maximum Junction Temperature Tj 150 L M
R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Storage Temperature Range Tstg -55 150 _
K 3.23 + 0.1
D
L 1.47 MAX
Thermal Characteristics
M 1.47 MAX
N N H
Thermal Resistance, Junction-to-Case RthJC 0.78 2.4 /W N _
2.54 + 0.2
O _
6.68 + 0.2
Thermal Resistance, Q _
4.7 + 0.2
RthJA 62.5 62.5 /W 1. GATE
_
Junction-to-Ambient 1 2 3 2. DRAIN R 2.76 + 0.2
Q
3. SOURCE
* : Drain current limited by maximum junction temperature.
TO-220IS (1)
PIN CONNECTION
D
G
S
2011. 1. 27 Revision No : 0 1/7
KF8N60P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.65 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4A - 0.85 1.05
Dynamic
Total Gate Charge Qg - 22 -
VDS=480V, ID=8A
Gate-Source Charge Qgs - 5 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 8 -
Turn-on Delay time td(on) - 45 -
VDD=300V
Turn-on Rise time tr - 35 -
ID=8A ns
Turn-off Delay time td(off) - 75 -
RG=25 (Note4,5)
Turn-off Fall time tf - 30 -
Input Capacitance Ciss - 1000 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 115 - pF
Reverse Transfer Capacitance Crss - 8 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 8
VGS Pulsed Source Current ISP - - 32
Diode Forward Voltage VSD IS=8.0A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=8.0A, VGS=0V, - 400 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 4.1 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =6.7mH, IS=8A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 8.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF8N60
KF8N60
F 813 2
P 801 2
1 PRODUCT NAME
2 LOT NO
2011. 1. 27 Revision No : 0 2/7
KF8N60P/F
Fig1. ID - VDS Fig2. ID - VGS
100
VDS=20V
1
10
Drain Current ID (A)
Drain Current ID (A)
VGS=10V, 7V
10
25 C
0
10
1 VGS=5V
100 C
-1
0.1 10
0.1 1 10 100 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 2.4
VGS = 0V
On - Resistance RDS(ON) ()
IDS = 250
2.0
1.1
1.6
VGS=7V
1.0 1.2
VGS=10V
0.8
0.9
0.4
0.8 0
-100 -50 0 50 100 150 0 2 4 6 8 10 12
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD Fig6. RDS(ON) - Tj
10
2 3.0
VGS =10V
Reverse Drain Current IS (A)
IDS = 4A
2.5
Normalized On Resistance
10
1 2.0
1.5
100 C 25 C
10
0 1.0
0.5
10
-1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150
Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)
2011. 1. 27 Revision No : 0 3/7
KF8N60P/F
Fig 7. C - VDS Fig8. Qg- VGS
104 12
ID=8A
Gate - Source Voltage VGS (V)
Ciss 10 VDS = 480V
103
Capacitance (pF)
8
Coss
102 6
4
Crss
101
2
100 0
0 5 10 15 20 25 30 35 40 0 4 8 12 16 20 24 28 32
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area Fig10. Safe Operation Area
(KF8N60P) (KF8N60F)
102 102
Operation in this Operation in this
area is limited by RDS(ON) area is limited by RDS(ON)
10