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SEMICONDUCTOR MMBTA13/14
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
E
L B L
DIM MILLIMETERS
A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2
MAXIMUM RATING (Ta=25 ) 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
CHARACTERISTIC SYMBOL RATING UNIT 1 G 1.90
H 0.95
VCBO J 0.13+0.10/-0.05
Collector-Base Voltage 30 V
K 0.00 ~ 0.10
L 0.55
Collector-Emitter Voltage VCES 30 V P P
M 0.20 MIN
N 1.00+0.20/-0.10
Emitter-Base Voltage VEBO 10 V
N
C
P 7
J
Collertor Current IC 500 mA M
K
Collector Power Dissipation PC * 350 mW
1. EMITTER
Junction Temperature Tj 150
2. BASE
Storage Temperature Range Tstg -55 150 3. COLLECTOR
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage VCES IC=0.1mA 30 - - V
Emitter Cut-off Current ICBO VCB=30V - - 100 nA
Emitter Cut-off Current IEBO VEB=10V - - 100 nA
MMBTA13 5,000 - -
IC=10mA, VCE=5V
MMBTA14 10,000 - -
DC Current Gain hFE * -
MMBTA13 10,000 - -
IC=100mA, VCE=5V
MMBTA14 20,000 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=0.1mA - - 1.5 V
Base-Emitter Voltage VBE IC=100mA, VCE=5V - - 2.0 V
Current Gain Bandwith Product fT IC=10mA, f=100MHz, VCE=5V 125 - - MHz
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
MARK SPEC
Marking
Lot No.
TYPE MMBTA13 MMBTA14
MARK AIX AHX Type Name
A X
1999. 11. 30 Revision No : 4 1/2
MMBTA13/14
1999. 11. 30 Revision No : 4 2/2