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SEMICONDUCTOR TIP35CA
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A
N Q B
FEATURES O K
Recommended for 75W Audio Frequency
F
DIM MILLIMETERS
Amplifier Output Stage. A _
15.60 + 0.20
B _
4.80 + 0.20
C
J
Complementary to TIP36CA.
R
I
C _
19.90 + 0.20
H
D _
2.00 + 0.20
Icmax:25A. _
d 1.00 + 0.20
E _
3.00 + 0.20
G
F _
3.80 + 0.20
D G _
3.50 + 0.20
E H _
13.90 + 0.20
I _
L
12.76 + 0.20
d M _
MAXIMUM RATING (Ta=25 ) J 23.40 + 0.20
K 1.5+0.15-0.05
_
CHARACTERISTIC SYMBOL RATING UNIT L 16.50 + 0.30
P P T M _
1.40 + 0.20
_
13.60 + 0.20
Collector-Base Voltage VCBO 100 V N
O _
9.60 + 0.20
P _
5.45 + 0.30
Collector-Emitter Voltage VCEO 100 V 1 2 3
Q _
3.20 + 0.10
R _
18.70 + 0.20
Emitter-Base Voltage VEBO 5 V T 0.60+0.15-0.05
1. BASE
Collector Current IC 25 A 2. COLLECTOR (HEAT SINK)
3. EMITTER
Base Current IB 5.0 A
Collector Power Dissipation
PC 125 W TO-3P(N)-E
(Tc=25 )
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A
Collector-emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 100 - - V
hFE(1) (Note) VCE=5V, IC=1.5A 55 - 160
DC Current Gain
hFE(2) VCE=4V, IC=15A 15 - -
VCE(sat)(1) IC=15A, IB=1.5A - - 1.8
Collector-Emitter Saturation Voltage V
VCE(sat)(2) IC=25A, IB=5.0A - - 4.0
Base-Emitter Voltage VBE VCE=5V, IC=5A - - 1.5 V
Transition Frequency fT VCE=5V, IC=1A 3.0 - - MHz
Note : hFE(1) Classification R:55~110, O:80~160
2005. 5. 16 Revision No : 0 1/2
TIP35CA
SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS
2 10
T J =25 C
1 5 VCC =30V
I C /I B =10
0.5 3
I B1 =I B2
0.3 tr
TIME t (