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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ105AB
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount
package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching
regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 16 A
Ptot Total power dissipation Tmb 25