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2SB7 09A
TRANSISTOR(PNP)
SOT-23
FEATURES
For general amplification 1. BASE
Complementary to 2SD601A 2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -45 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current -Continuous -100 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -10 A, IE=0 -45 V
Collector-emitter breakdown voltage V(BR)CEO IC= -2mA, IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE= -10 A, IC=0 -7 V
Collector cut-off current ICBO VCB= -20 V, IE=0 -0.1 A
Collector cut-off current ICEO VCE= -10V, IB=0 -100 A
DC current gain hFE VCE= -10V,IC= -2mA 160 460
Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.5 V
VCE= -10V, IC= -1mA
Transition frequency fT 60 MHz
f=200MHz
VCB= -10V, IE= 0
Collector output capacitance Cob 2.7 pF
f=1MHz
CLASSIFICATION OF HFE
Rank Q R S
Range 160-260 210-340 290-460
Marking BQ1 BR1 BS1
1
JinYu www.htsemi.com
semiconductor
2SB7 09A
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
2SB7 09A
3
JinYu www.htsemi.com
semiconductor
Date:2011/05