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BC807-16W
BC807-25W
BC807-40W
SOT-323 Transistor(PNP)
1. BASE
2. EMITTER
3. COLLECTOR
SOT-323

Features
Ldeally suited for automatic insertion
epitaxial planar die construction
complementary to BC817W

MARKING: 16W:5A; 25W:5B; 40W:5C

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -45 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.5 A
PC Collector Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage VCBO IC= -10A, IE=0 -50 V

Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V

Emitter-base breakdown voltage VEBO IE= -1A, IC=0 -5 V

Collector cut-off current ICBO VCB= -20 V , IE=0 -0.1 A

Collector cut-off current ICEO VCE= -20 V , IB=0 -0.2 A

Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 A
100 250
DC current gain 807-16W hFE(1) VCE= -1V, IC= -100mA 160 400
807-25W 250 600
807-40W
hFE(2) VCE= -1V, IC= -500mA 40

Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50 mA -0.7 V

Base-emitter voltage VBE(on) VCE= -1V, IC= -500mA -1.2 V
VCE= -5 V, IC= -10mA
Transition frequency fT 80 MHz
f=100MHz
Collector output capacitance Cob VCB=-10V,f=1MHz 10 pF
BC807-16W
BC807-25W
BC807-40W
SOT-323 Transistor(PNP)
Typical Characteristics
BC807-16W
BC807-25W
BC807-40W
Switching Diodes