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STP50NE10
N-channel 100V - 0.021 - 50A TO-220
STripFETTM Power MOSFET
General features
Type VDSS RDS(on) ID
STP50NE10 100V <0.027 50A
Exceptional high dv/dt capability
3
100% avalanche tested 2
1
Low gate charge at 100 oC
TO-220
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Application oriented characterization
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Description
This Power MOSFET is the latest development of
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STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on- P ro
Internal schematic diagram
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
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remarkable manufacturing reproducibility.
Applications
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Switching application
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Order
Part number Marking Package Packaging
STP50NE10 P50NE10 TO-220 Tube
August 2006 Rev 8 1/12
www.st.com 12
Contents STP50NE10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STP50NE10 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 100 V
VDGR Drain-gate voltage (RGS = 20K) 100 V
VGS Gate-source voltage