Text preview for : stp8nm50.pdf part of ST stp8nm50 . Electronic Components Datasheets Active components Transistors ST stp8nm50.pdf



Back to : stp8nm50.pdf | Home

STP8NM50
STP8NM50FP
N-CHANNEL 500V - 0.7 - 8A TO-220/TO-220FP
MDmeshTMPower MOSFET

TYPE VDSS RDS(on) ID

STP8NM50 500V < 0.8 8A
STP8NM50FP 500V < 0.8 8A
n TYPICAL RDS(on) = 0.7
n HIGH dv/dt AND AVALANCHE CAPABILITIES
3 3
n 100% AVALANCHE TESTED 2 2
1 1
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE TO-220 TO-220FP

DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent INTERNAL SCHEMATIC DIAGRAM
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.

APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.



ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP8NM50 STP8NM50FP
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain-gate Voltage (RGS = 20 k) 500 V
VGS Gate- source Voltage