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STT13005D
High voltage fast-switching NPN power transistor
Features
Integrated antiparallel collector-emitter diode
High voltage capability
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications 1
2
Electronic ballast for fluorescent lighting 3
Flyback and forward single transistor low SOT-32
power converters
Description Figure 1. Internal schematic diagram
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
Table 1. Device summary
Order codes Marking Package Packaging
STT13005D T13005D SOT-32 Tube
STT13005D-K T13005D SOT-32 Bag
November 2009 Doc ID 14897 Rev 2 1/10
www.st.com 10
Electrical ratings STT13005D
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 9 V
IC Collector current 2 A
ICM Collector peak current (tP < 5 ms) 4 A
IB Base current 1 A
IBM Base peak current (tP < 5 ms) 2 A
PTOT Total dissipation at Tc = 25